# ******************************************************************* 
# File: neumos.ext
# Based on: scga.ext 3.0
# Technology Setup File: neumos.tdb
# LVS element definition file: neumos.elm
# Vendor: MOSIS
# Technology: 2.0U Generic Technology (Lambda = 1.0um, Technology = SCGA) 
# copyleft 1993 - Bhusan Gupta / Caltech
# tobi added buster's moscaps 7/93
# tobi fixed problem with poly 2 over poly 1 channels, turned on bhusan's
# resistors, capacitors, added tetrodes - 11/93
# updated file for cns184 - 2/95
# Matt Clapp added pbase tran, and tunjunct, made everything unique,
#	and added derived layer explanations - 8/95
# ******************************************************************* 


# Here are some derived layer definitions:
# ----------------------------------------
# xxxx not resistor	= xxxx & NOT resistor ID
# field active		= NOT(all poly) & active
# native diffusion	= Select & field active
# substrate		= NOT well
# other diffusion	= field active & NOT select
# all bulks		= well | substrate
# real Pbase xsistor	= gate & real PBase
# real native xsistor	= gate & substrate & NOT PBase
# real other xsistor	= gate & Well & NOT Select
# real NPN xsistor	= real Pbase & Well & native diffusion
# tunnode		= other transistor & Select & NOT Pbase
#
# Note: 'real' also denotes " & NOT 'extractor ignore'"

connect(Well not resistor, native diffusion, not PBase)
#connect(Well, native diffusion, not PBase)
connect(substrate, other diffusion, other diffusion)
connect(other diffusion, PBase, other diffusion)
connect(PBase, substrate, PBase)
connect(native diffusion, Metal1, ActiveContact)
connect(other diffusion, Metal1, ActiveContact)
connect(poly not resistor, Metal1, PolyContact)
#connect(Poly, Metal1, PolyContact)
connect(Poly2, Metal1, Poly2Contact)
connect(poly2 not poly, Poly2, Poly2)
connect(Metal1, Metal2, Via)
connect(all bulks, substrate, substrate)
	# preceding statement connects substrate even when
	# separated by a ring of well diffusion 
	# this is necessary to handle NPN's correctly.
	# but requires connection between Gnd and Padgnd, for example.
	# to make this connection, place only ONE of these in
	# the port statement, but NOT both. then connect the two labels
	# with a wire - tobi


# PBase MOS transistor with poly1 gate
device = SUBCKT(
               RLAYER =	real PBase transistor;
               Drain =	native diffusion, WIDTH;
               Gate =	poly not resistor;
               Source =	native diffusion, WIDTH;
               Bulk =	all bulks;
               MODEL =	pbase;
               )

# NMOS transistor with poly1 gate
device = MOSFET(
               RLAYER=real native transistor;  
               Drain=native diffusion, WIDTH;
               Gate=poly not resistor;
               Source=native diffusion, WIDTH;
               Bulk=substrate;
               MODEL=NMOS1;
               )
# PMOS transistor with poly1 gate
device = MOSFET(
               RLAYER=real other transistor;
               Drain=other diffusion, WIDTH;
               Gate=poly not resistor;
               Source=other diffusion, WIDTH;
               Bulk=Well not resistor;
               MODEL=PMOS1;
               )
# NMOS transistor with poly2 gate
device = MOSFET(
               RLAYER=real native transistor;  
               Drain=native diffusion, WIDTH;
               Gate=poly2 not poly;   
               Source=native diffusion, WIDTH;
               Bulk=substrate;
               MODEL=NMOS1;
               )
# PMOS transistor with poly2 gate
device = MOSFET(
               RLAYER=real other transistor;
               Drain=other diffusion, WIDTH;
               Gate=poly2 not poly;
               Source=other diffusion, WIDTH;
               Bulk=Well not resistor;
               MODEL=PMOS1;
               )

# NPN transistor
device = BJT(
            RLAYER=real NPN transistor;
            Coll=Well not resistor;
            Base=PBase;
            Emit=native diffusion;
            Subs=all bulks;
            MODEL=NPN1;
            )
#
# Poly resistor
device = RES(
            RLAYER=Resistor ID;
            Plus=poly not resistor, WIDTH;
            Minus=poly not resistor, WIDTH;
            MODEL=;
            )

#
# Well resistor
device = RES(
            RLAYER=well resistor ID;
            Plus=Well not resistor, WIDTH;
            Minus=Well not resistor, WIDTH;
            MODEL=;
            )

# Poly-Poly2 capacitor
device = CAP(
            RLAYER=Capacitor ID;
            Plus=poly not resistor;
            Minus=Poly2;
            MODEL=;
            )

# Bonding Area
device = SUBCKT(
            RLAYER=PadComment;
            Pin1=Metal1;
            MODEL= PADBOND;
            )

# MOSCAPX is a MOS capacitor where X is channel type (N or P)
device = SUBCKT(
		RLAYER=real native transistor;
		Gate=poly not resistor;
		Diff=native diffusion, WIDTH;
		Bulk=substrate;
		MODEL=MOSCAPN;
		)

device = SUBCKT(
		RLAYER=real native transistor;
		Gate2=poly2 not poly;
		Diff2=native diffusion, WIDTH;
		Bulk2=substrate;
		MODEL=MOSCAPN;
		)

device = SUBCKT(
		RLAYER=real other transistor;
		Gate=poly not resistor;
		Diff=other diffusion, WIDTH;
		Bulk=Well not resistor;
		MODEL=MOSCAPP;
		)

device = SUBCKT(
		RLAYER=real other transistor;
		Gate2=poly2 not poly;
		Diff2=other diffusion, WIDTH;
		Bulk2=Well not resistor;
		MODEL=MOSCAPP;
		)

# tetrodes - transistors with overlapping Poly and Poly2 gates
device = SUBCKT(
		RLAYER=real native transistor;
		Source=native diffusion, WIDTH;
		Gate1=poly not resistor;
		Gate2=poly2 not poly;
		Drain=native diffusion, WIDTH;
		Bulk=substrate;
		MODEL=TETRODEN;
		)

device = SUBCKT(
		RLAYER=real other transistor;
		Source=other diffusion, WIDTH;
		Gate1=poly not resistor;
		Gate2=poly2 not poly;
		Drain=other diffusion, WIDTH;
		Bulk=Well not resistor;
		MODEL=TETRODEP;
		)
device = SUBCKT(
		RLAYER=tunnode;
		Tun=Well not resistor;
		FloatingGate=poly not resistor;
		MODEL=tunjunct;
		)